- 您现在的位置：买卖IC网 > Sheet目录407 > DMN6068SE-13 (Diodes Inc)MOSFET N-CH 60V 4.1A SOT223
A Product Line of
Diodes Incorporated
DMN6068SE
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source voltage
Characteristic
Symbol
V DSS
Value
60
Unit
V
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
(Note 6)
(Note 11)
(Note 11)
V GS
E AS
I AS
? 20
37.5
5.0
V
mJ
A
(Note 8)
5.6
Continuous Drain current
V GS = 10V
T A = +70°C (Note 8)
I D
4.5
A
(Note 7)
4.1
Pulsed Drain current
V GS = 10V
(Note 9)
I DM
20.8
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 8)
(Note 9)
I S
I SM
4.9
20.8
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 7)
(Note 8)
(Note 7)
(Note 8)
(Note 10)
P D
R θ JA
R θ JL
T J , T STG
2.0
16.0
3.7
29.5
62.5
34
11.5
-55 to +150
W
mW/°C
°C/W
°C
Notes:
6. AEC-Q101 V GS maximum is ? 16V.
7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
8. Same as note (3), except the device is measured at t ? 10 sec.
9. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
11. UIS in production with L = 3.0mH, I AS = 5.0A, R G = 25 ? , V DD =50V, starting T J = +25°C.
DMN6068SE
Document Number DS32033 Rev. 4 - 2
2 of 9
www.diodes.com
September 2013
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
DMN62D0LFB-7B
MOSFET N-CH 60V 100MA 3-DFN
DMN62D0SFD-7
MOSFET N-CH 60V 540MA 3-DFN
DMN65D8LDW-7
MOSF N CH DUAL 60V 180MA SOT363
DMN65D8LFB-7B
MOSF N CH 60V 260MA X1-DFN1006-3
DMN65D8LW-7
MOSFET N CH 60V 300MA SOT323
DMN66D0LDW-7
MOSFET N-CH DUAL 115MA SOT-363
DMN66D0LT-7
MOSFET N-CH 60V 115MA SOT-523
DMP1022UFDE-7
MOSF P CH 12V U-DFN2020-6 TYPE E
相关代理商/技术参数
DMN62D0LFB
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0LFB-7
功能描述:MOSFET MOSFET BVDSS: 41V-60 X2-DFN1006-3 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN62D0LFB-7B
功能描述:MOSFET N-CH 60V 100MA 3-DFN RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
DMN62D0SFD-7
功能描述:两极晶体管 - BJT MOSFET BVDSS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
DMN62D1SFB-7B
功能描述:MOSFET MOSFET BVDSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN63D0LT-7
功能描述:MOSFET MOSFET BVDSS: 61V-10 V-100V SOT523 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN63D8LDW-13
制造商:Diodes Incorporated 功能描述:MOSF N CH DL 30V 220MA SOT363
DMN63D8LDW-7
制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 41V-60V SOT363 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET N CH DL 30V 220MA SOT363